Atomic scale structure and chemistry of Bi2Te3/GaAs interfaces grown by metallorganic van der Waals epitaxy-Reference-Cited by-同舟云学术

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Atomic scale structure and chemistry of Bi2Te3/GaAs interfaces grown by metallorganic van der Waals epitaxy

Published:2013-02-25 Issue:8 Volume:102 Page:081601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Houston Dycus J.,White Ryan M.,Pierce Jonathan M.,Venkatasubramanian Rama,LeBeau James M.

Funder

Defense Advanced Research Projects Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4793518

Reference26 articles.

1. Thermoelectrics: a review of present and potential applications

2. Bulk nanostructured thermoelectric materials: current research and future prospects

3. Cooling, Heating, Generating Power, and Recovering Waste Heat with Thermoelectric Systems

4. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

5. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3

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2. Prediction of electronic structure and thermoelectric performance of bulk and monolayer BiSbSeTe2;The European Physical Journal B;2023-03

3. Molecular beam epitaxy and polarized excitonic emission of layered GaTe/GaAs thin films;Journal of Crystal Growth;2022-08

4. Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium;ACS Nano;2022-03-11

5. In Situ Atomistic Insight into Magnetic Metal Diffusion across Bi _0.5 Sb _1.5 Te ₃ Quintuple Layers;Advanced Materials Interfaces;2022-02-06

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