Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1579852
Reference8 articles.
1. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
2. RESURF AlGaN/GaN HEMT for high voltage power switching
3. Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
4. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise
5. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
Cited by 106 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band;IEEE Transactions on Electron Devices;2024-08
2. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing;Solid-State Electronics;2024-03
3. Investigation of the DC Performance and Linearity of InAlN/GaN HFETs via Studying the Impact of the Scaling of LGS and LG on the Source Access Resistance;IEEE Journal of the Electron Devices Society;2024
4. The isolation feature geometry dependence of reverse gate-leakage current of AlGaN/GaN HFETs;Physica Scripta;2023-08-09
5. Gate leakage mechanisms of the AlGaN/GaN HEMT with fluorinated graphene passivation;Materials Science in Semiconductor Processing;2023-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3