Polarity of homoepitaxial ZnO films grown by Nd:YAG pulsed laser deposition-Reference-Cited by-同舟云学术

Polarity of homoepitaxial ZnO films grown by Nd:YAG pulsed laser deposition

Published:2024-09-03 Issue:9 Volume:136 Page:
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Masuda Tatsuya¹^ORCID,Sato Toshihiro²,Lippmaa Mikk³^ORCID,Dazai Takuro⁴^ORCID,Sekine Norihiko⁵^ORCID,Hosako Iwao⁵^ORCID,Koinuma Hideomi¹,Takahashi Ryota⁴^ORCID

Affiliation:

1. Smart Combinatorial Technology 1 , Tokyo 105-0014, Japan

2. Vacuum Products 2 , Tokyo 187-0012, Japan

3. Institute for Solid State Physics, University of Tokyo 3 , Chiba 277-8581, Japan

4. College of Engineering, Department of Electrical and Electronic Engineering, Nihon University 4 , Fukushima 963-8642, Japan

5. National Institute of Information and Communications Technology 5 Beyond 5G Research and Development Promotion Unit Terahertz Technology Research Center, , Tokyo 184-8795, Japan

Abstract

We investigate the stability of the polar surface of ZnO films grown homoepitaxially on atomically flat ZnO (0001¯) O-face substrates by neodymium yttrium aluminum garnet (Nd:YAG) pulsed laser deposition (PLD). For films grown in the temperature range from 500 to 700 °C, ion scattering spectroscopy showed that the film surface termination was the same as the ZnO substrate. Even for a Mg0.2Zn0.8O/ZnO superlattice, no polarity reversal occurred, indicating that the ZnO (0001¯) O-face is highly stable, despite the film surface sputtering caused by the high kinetic energy of the PLD plume generated by the Nd:YAG laser.

Funder

ATLA Innovative Science and Technology Initiative for Security

JST-Mirai Program

Nihon University research grant for SDGs related projects

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0223495/20141543/095303_1_5.0223495.pdf

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