Stress-induced Néel vector reorientation in γ-FeMn antiferromagnetic thin films

Author:

Shirazi Paymon1ORCID,Panduranga Mohanchandra K.1ORCID,Lee Taehwan2ORCID,Barra Anthony1,Estrada Victor1,Tran David L.1,Sepulveda Abdon E.1ORCID,Carman Gregory P.1ORCID

Affiliation:

1. Department of Mechanical and Aerospace Engineering, University of California Los Angeles, Los Angeles, California 90095, USA

2. Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, USA

Abstract

The relationship between stresses and the orientation of the Néel vector were studied by varying the residual stresses in magnetron sputtered FeMn thin films by adjusting Argon working pressures. Quasistatic magnetization and AC susceptibility measurements reveal that the FeMn film with compressive stress (−27 MPa/−0.015% strain) possesses an out-of-plane Néel vector orientation with a 44 kOe spin-flop field, as contrasted to the FeMn film with tensile stress (25 MPa/0.014% strain) showing an in-plane orientation with a 34 kOe spin-flop field. An energy formulation for the films estimates a magnetostriction value of 109 ppm following an effective anisotropy of −8 kJ/m3. The film with the larger residual stress (77 MPa/0.043% strain) displayed a strain-induced phase transition from γ-FeMn to α-FeMn. These results show the dependency of the Néel vector on the stress state indicative of relatively large magnetostriction.

Funder

National Science Foundation

Army Research Office

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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