Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106-5050, USA
2. Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Funder
Bonderson Fellowship
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4894464
Reference20 articles.
1. Simulation of light-emitting diodes for new physics understanding and device design
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3. Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
4. Strain-induced polarization in wurtzite III-nitride semipolar layers
5. Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer
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