Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars-Reference-Cited by-同舟云学术

Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars

Published:2016-12-28 Issue:24 Volume:120 Page:245702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bergamaschini Roberto¹^ORCID,Bietti Sergio¹,Castellano Andrea¹,Frigeri Cesare²,Falub Claudiu V.³,Scaccabarozzi Andrea¹,Bollani Monica⁴,von Känel Hans³,Miglio Leo¹,Sanguinetti Stefano¹

Affiliation:

1. L-NESS and Department of Materials Science, University of Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy

2. CNR-IMEM Institute, Parco Area delle Scienze 37/A, I-43100 Parma, Italy

3. Laboratory for Solid State Physics, ETH Zürich, Schafmattstrasse 16, CH-8093 Zürich, Switzerland

4. L-NESS and CNR-IFN Institute, Via Anzani 42, I-22100 Como, Italy

Funder

Fondazione Cariplo (Cariplo Foundation)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4972467

Reference49 articles.

1. Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates

2. GaAs on Si(111)—crystal shape and strain relaxation in nanoscale patterned growth

3. Epitaxial growth of a nanoscale, vertically faceted, one-dimensional, high-aspect ratio grating in III-V materials for integrated photonics

4. Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

5. Selective area growth of high quality InP on Si (001) substrates

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