Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition

Author:

Woo Whang Je1ORCID,Seo Seunggi12ORCID,Yoon Hwi1ORCID,Lee Sanghun1ORCID,Kim Donghyun1,Park Seonyeong1ORCID,Kim Youngjun1,Sohn Inkyu1ORCID,Park JuSang3,Chung Seung-min1ORCID,Kim Hyungjun1ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University 1 , 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea

2. Department of Chemical Engineering, Stanford University 2 , Stanford, California 94305, USA

3. Advanced Institute of Convergence Technology, Seoul National University 3 , Suwon 16229, Republic of Korea

Abstract

Molybdenum disulfide (MoS2), a semiconducting two-dimensional layered transition metal dichalcogenide (2D TMDC), with attractive properties enables the opening of a new electronics era beyond Si. However, the notoriously high contact resistance (RC) regardless of the electrode metal has been a major challenge in the practical applications of MoS2-based electronics. Moreover, it is difficult to lower RC because the conventional doping technique is unsuitable for MoS2 due to its ultrathin nature. Therefore, the metal–insulator–semiconductor (MIS) architecture has been proposed as a method to fabricate a reliable and stable contact with low RC. Herein, we introduce a strategy to fabricate MIS contact based on atomic layer deposition (ALD) to dramatically reduce the RC of single-layer MoS2 field effect transistors (FETs). We utilize ALD Al2O3 as an interlayer for the MIS contact of bottom-gated MoS2 FETs. Based on the Langmuir isotherm, the uniformity of ALD Al2O3 films on MoS2 can be increased by modulating the precursor injection pressures even at low temperatures of 150 °C. We discovered, for the first time, that film uniformity critically affects RC without altering the film thickness. Additionally, we can add functionality to the uniform interlayer by adopting isopropyl alcohol (IPA) as an oxidant. Tunneling resistance across the MIS contact is lowered by n-type doping of MoS2 induced by IPA as the oxidant in the ALD process. Through a highly uniform interlayer combined with strong doping, the contact resistance is improved by more than two orders of magnitude compared to that of other MoS2 FETs fabricated in this study.

Funder

Samsung Display Co., Ltd.

Ministry of Trade, Industry and Energy

Ministry of Science and ICT, South Korea

Publisher

AIP Publishing

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