Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt-Reference-Cited by-同舟云学术

Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt

Published:2013-10-21 Issue:15 Volume:114 Page:153510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sueoka Koji,Kamiyama Eiji,Vanhellemont Jan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4825222

Reference52 articles.

1. The effect of doping on microdefect formation in as‐grown dislocation‐free Czochralski silicon crystals

2. Microdefects and Impurities in Dislocation-Free Silicon Crystals

3. Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

4. OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon

5. K. Nakamura, R. Suewaka, T. Saishoji, and J. Tomioka, in Proceedings of the Forum on the Science and Technology of Silicon Materials 2003, 2003, p.161 and references therein.

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