Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties-Reference-Cited by-同舟云学术

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Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

Published:2021-08-14 Issue:6 Volume:130 Page:065104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

John P.¹^ORCID,Al Khalfioui M.¹,Deparis C.¹^ORCID,Welk A.²^ORCID,Lichtensteiger C.³^ORCID,Bachelet R.⁴^ORCID,Saint-Girons G.⁴^ORCID,Rotella H.¹,Hugues M.¹,Grundmann M.²^ORCID,Zúñiga-Pérez J.¹^ORCID

Affiliation:

1. Université Côte d’Azur, CNRS, CRHEA, Rue Bernard Gregory, 06560 Valbonne, France

2. Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Linnéstraße 5, 04103 Leipzig, Germany

3. DQMP, University of Geneva, 24 Quai Ernest Ansermet, Geneva 4 1211, Switzerland

4. Université de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France

Funder

Agence Nationale de la Recherche

Deutsche Forschungsgemeinschaft

Federation de Recherche Wolfgang Doblin

Université Côte d'Azur

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0057307

Reference68 articles.

1. GaN Technology for Power Electronic Applications: A Review

2. LED-based white light

3. Group III-nitride lasers: a materials perspective

4. Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films

5. p-Type ZnO thin films prepared by oxidation of Zn3N2 thin films deposited by DC magnetron sputtering

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