Strain engineered Si∕SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2981211
Reference15 articles.
1. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
2. Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions
3. The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM Circuits
4. Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration
5. Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation
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1. Junctionless FETs With a Fin Body for Multi- ${V}_{\text{TH}}$ and Dynamic Threshold Operation;IEEE Transactions on Electron Devices;2018-08
2. A Simulation Study on Process Sensitivity of a Line Tunnel Field-Effect Transistor;IEEE Transactions on Electron Devices;2013-03
3. Negative Differential Resistance Devices and Circuits;Comprehensive Semiconductor Science and Technology;2011
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