Domain engineering of physical vapor deposited two-dimensional materials-Reference-Cited by-同舟云学术

Domain engineering of physical vapor deposited two-dimensional materials

Published:2014-11-24 Issue:21 Volume:105 Page:213110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alam Tarek¹^ORCID,Wang Baoming¹^ORCID,Pulavarthy Raghu¹,Haque M. A.¹,Muratore Christopher²,Glavin Nicholas³,Roy Ajit K.³,Voevodin Andrey A.³

Affiliation:

1. Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, 314, Leonhard Building, University Park, Pennsylvania 16802, USA

2. Kettering Laboratories, Department of Chemical and Materials Engineering, University of Dayton, Room 508A, Ohio 45469, USA

3. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB, 3005 Hobson Way, Building 651/253, Ohio 45433, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902937

Reference35 articles.

1. The rise of graphene

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

4. Single-layer MoS2 transistors

5. How Good Can Monolayer MoS2 Transistors Be?

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