1. Field-programmable rectification in rutile TiO2 crystals
2. Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers
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4. Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-KMISFET with p+poly-Si Gates -A Theoretical Approach
5. Oxygen Vacancies in High Dielectric Constant Oxide-Semiconductor Films