Diffusion of tin in germanium: A GGA+U approach
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3653472
Reference34 articles.
1. Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion
2. Phosphorous clustering in germanium-rich silicon germanium
3. Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium
4. Dopant-vacancy cluster formation in germanium
5. The role of La surface chemistry in the passivation of Ge
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