Enhancement in light efficiency of a GaN:Eu red light-emitting diode by pulse-controlled injected charges
Author:
Affiliation:
1. National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan
2. Division of Materials and Manufacturing Science, Graduate School of Engineering Osaka University, Suita, Osaka 565-0871, Japan
Funder
Kakenhi with a Grand-in-Aid for Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4900840
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5. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection
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