Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO

Author:

Onuma Takeyoshi1ORCID,Kudo Kanta1,Ono Mizuki1,Kosaka Wataru1,Shima Kohei2ORCID,Ishii Kyohei3,Kaneko Kentaro3456ORCID,Ota Yuichi7ORCID,Yamaguchi Tomohiro1ORCID,Kojima Kazunobu2ORCID,Fujita Shizuo358ORCID,Chichibu Shigefusa F.2ORCID,Honda Tohru1

Affiliation:

1. Department of Applied Physics, School of Advanced Engineering and Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University 1 , 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan

2. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2 , Sendai 980-8577, Japan

3. Department of Electronic Science and Engineering, Kyoto University 3 , Kyoto 615-8510, Japan

4. Engineering Education Research Center, Kyoto University 4 , Katsura, Nishikyo-ku, Kyoto 615-8530, Japan

5. Photonics and Electronics Science and Engineering Center, Kyoto University 5 , Katsura, Nishikyo-ku, Kyoto 615-8520, Japan

6. Research Organization of Science and Technology, Ritsumeikan University 6 , 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan

7. Tokyo Metropolitan Industrial Technology Research Institute 7 , 2-4-10 Aomi, Koto-ku, Tokyo 135-0064, Japan

8. Office of Society-Academia Collaboration for Innovation, Kyoto University 8 , Kyoto 606-8501, Japan

Abstract

Temperature-dependent cathodoluminescence spectra were measured for rock salt-structured MgxZn1−xO films with x = 0.95–0.61. The Mg0.95Zn0.05O film exhibited the shortest deep UV peak wavelength of 199 nm (6.24 eV) at 6 K. Relatively high equivalent internal quantum efficiencies of 0.9%–11% were obtained. The Tauc plots, which were obtained from temperature-dependent optical transmittance measurements, exhibited large Stokes-like shifts of 0.7–0.9 eV at 6–300 K. Time-resolved photoluminescence (PL) signals at 7 K exhibited fast and slow decay components. The fast decay component had PL lifetimes of 2.59–3.08 ns, and the slow decay component far exceeded the measurement time range of 12.5 ns. The fast decay constant reflected the transfer lifetime of the photoexcited carriers to certain trapping centers. These centers were tentatively ascribed to Zn-related isoelectronic trapped-hole centers and may be a cause of the large Stokes-like shifts. The signals at 300 K exhibited very short PL lifetimes of 120–180 ps. The PL lifetimes were mainly attributed to the nonradiative recombination lifetime. Simultaneous decreases in the Zn-related isoelectronic trapped-hole centers and the nonradiative recombination centers were found to be necessary to improve the DUV emission properties of RS-MgxZn1−xO films.

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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