Real time spectroscopic ellipsometry studies of the nucleation and growth of p-type microcrystalline silicon films on amorphous silicon using B2H6, B(CH3)3 and BF3 dopant source gases-Reference-Cited by-同舟云学术

Real time spectroscopic ellipsometry studies of the nucleation and growth of p-type microcrystalline silicon films on amorphous silicon using B2H6, B(CH3)3 and BF3 dopant source gases

Published:1999-04-15 Issue:8 Volume:85 Page:4141-4153
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Koh Joohyun,Fujiwara H.,Koval R. J.,Wronski C. R.,Collins R. W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.370323

Reference21 articles.

1. Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cells

2. Insitustudy ofp‐type amorphous silicon growth from B2H6:SiH4mixtures: Surface reactivity and interface effects

3. Insitustudy of the thermal decomposition of B2H6by combining spectroscopic ellipsometry and Kelvin probe measurements

4. Real time spectroscopic ellipsometry study of hydrogenated amorphous silicon p‐i‐n solar cells: Characterization of microstructural evolution and optical gaps

5. High-Quality p-Type a-SiC Films Obtained by Using a New Doping Gas of B(CH3)3

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