Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method-Reference-Cited by-同舟云学术

Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Published:1997-06-16 Issue:24 Volume:70 Page:3209-3211
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yu G.,Wang G.,Ishikawa H.,Umeno M.,Soga T.,Egawa T.,Watanabe J.,Jimbo T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.119157

Reference10 articles.

1. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

2. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

3. Refractive index of GaN

4. Study of deep level defects in n‐GaN by the optical transmission method

5. Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry

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