Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2011791
Reference12 articles.
1. Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions
2. Schottky Barrier Heights and the Continuum of Gap States
3. Band offsets of wide-band-gap oxides and implications for future electronic devices
4. Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions
5. Contributions to the effective work function of platinum on hafnium dioxide
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