Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118493
Reference14 articles.
1. Fundamental absorption edge in GaN, InN and their alloys
2. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
3. Growth of compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes
4. Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets
5. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films
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