Simulation study of secondary electron multiplication on microwave dielectric window

Abstract

The phenomenon of dielectric breakdown in microwave windows restricts the enhancement of power capacity in high-power microwave systems. This process starts with the secondary electron multiplication, which significantly influences the breakdown threshold. In this study, we developed 3D simulation models for rectangular, circular, and annular windows to examine the secondary electron multiplication on their surfaces using the particle-in-cell method. Through a comparative study, we assessed the effects of various input powers, initial emission current densities from particle sources, and magnetic fields. Our findings reveal that the initial field emission current density, which ranges from 10−9 to 109 μA/cm2, marginally affects electron multiplication. However, increased microwave power (with power density ranging from 0.1 to 18.75 MW/cm2) accelerates this multiplication. Strong magnetic fields and non-uniform electric fields further enhance the electron multiplication process.