Affiliation:
1. RCA Laboratories, Princeton, New Jersey 08540
Abstract
Auger electron and x-ray photoelectron spectroscopies have been used to examine the chemistry of the hydrogenated amorphous silicon-tin oxide interface. Elemental tin is found in excess at the interface. Silicon dioxide resulting from a plasma-induced reduction of the tin dioxide surface is found throughout the thin silicon layer and peaks at the hydrogenated amorphous silicon-tin oxide interface.
Cited by
38 articles.
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