Influence of hydrogen dilution on the optoelectronic properties of glow discharge amorphous silicon carbon alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350698
Reference17 articles.
1. Physics of Amorphous Silicon–Carbon Alloys
2. a‐SiC:H/a‐Si:H heterojunction solar cell having more than 7.1% conversion efficiency
3. Guiding principle for preparing highly photosensitive Si-based amorphous alloys
4. Improvement of a-SiC:H alloys by hydrogen dilution of starting gases
5. Electronic and optical properties of a-Si1-xCx films prepared from a H2-diluted mixture of SiH4 and CH4
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1. Conduction mechanisms in hydrogenated amorphous silicon carbide;Journal of Non-Crystalline Solids;2020-01
2. Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution;Journal of Applied Physics;2002-09
3. Near-edge valence-band structure of amorphous hydrogenated Si–C thin films characterized by Auger and photoemission processes;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-07
4. Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution;Journal of Applied Physics;2001-01-15
5. Transport properties ofa−Si1−xCx:Hfilms investigated by the moving photocarrier grating technique;Physical Review B;2000-11-15
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