Silicon surface passivation by transparent conductive zinc oxide
Author:
Affiliation:
1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
2. Tempress Systems, 8171 MD Vaassen, The Netherlands
3. IEK-5, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Funder
Dutch Province of Noord-Brabant
Dutch topconsortia knowledge and innovation
Solliance Solar Research consortium
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5054166
Reference47 articles.
1. Statistics of the Recombinations of Holes and Electrons
2. Electron-Hole Recombination in Germanium
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4. Study of hydrogenated AlN as an anti-reflective coating and for the effective surface passivation of silicon
5. Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide
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