Strain-induced high-Chern-number spin-unlocked edge states in monolayer MnAsO3 with intrinsic quantum anomalous Hall effect

Author:

Chen Hongxin1ORCID,Lu Jiajun1ORCID,Wang Naibin1,Zhao Xiuwen1ORCID,Hu Guichao1ORCID,Yuan Xiaobo1ORCID,Ren Junfeng12ORCID

Affiliation:

1. School of Physics and Electronics, Shandong Normal University 1 , Jinan 250358, China

2. Shandong Provincial Engineering and Technical Center of Light Manipulations and Institute of Materials and Clean Energy, Shandong Normal University 2 , Jinan 250358, China

Abstract

Two-dimensional intrinsic magnetic topological materials that can realize device miniaturization have attracted significant attention recently based on their chiral dissipationless edge states. However, since the experimental observation of quantum anomalous Hall effect (QAHE) is still limited by low temperature, high operating temperature and large nontrivial gap are urgently needed. Here, monolayer MnAsO3 is predicted to be a room-temperature intrinsic magnetic topological material with high Chern number C = 3 based on first-principles calculations, which offers the possibility of achieving high-speed and low-energy-consumption electron transport in the future. Furthermore, the large and experimental feasible nontrivial gap up to 79.09 meV is obtained under compressive strain modulation. Moreover, the high-Chern-number topological phase transition and strain-induced spin-unlocked edge states are observed, indicating the possibility of tuning the electron transport of QAHE. All these findings suggest that monolayer MnAsO3 is a suitable and promising material for fabricating low-energy-consumption spintronics devices.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Qingchuang Science and Technology Plan of Shandong Province

Publisher

AIP Publishing

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