Growth and characterization of nanoscale 3C–SiC islands on Si substrates

Author:

Miyasato Tatsuro,Sun Yong,Wigmore J. Keith

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. References;Plasma Nanoscience;2008-08-13

2. Growth dynamics and characterization of SiC quantum dots synthesized by low-frequency inductively coupled plasma assisted rf magnetron sputtering;Journal of Applied Physics;2007-05

3. Surface fluxes of Si and C adatoms at initial growth stages of SiC quantum dots;Journal of Applied Physics;2007-02-15

4. Self-organized SiC nanostructures on silicon;Superlattices and Microstructures;2004-07

5. Study of ion beam mixing in C/Si multilayers by X-ray absorption spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-06

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