Direct tunneling stress-induced leakage current in ultrathin HfO2∕SiO2 gate dielectric stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2372313
Reference23 articles.
1. Model for the charge trapping in high permittivity gate dielectric stacks
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors
4. Mechanism for stress‐induced leakage currents in thin silicon dioxide films
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2. Effects of High‐Pressure H 2 and D 2 Post‐Metallization Annealing on the Electrical Properties of HfO 2 /Si 0.7 Ge 0.3;physica status solidi (RRL) – Rapid Research Letters;2023-01
3. Efficient methodology for estimation of metal effective work function, interface trap, and fixed oxide charges in metal-oxide-semiconductor capacitors with dual layer high - κ/SiO2 dielectric;Journal of Vacuum Science & Technology B;2019-11
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5. Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics;Journal of Applied Physics;2014-02-21
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