High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3130228
Reference23 articles.
1. N-polar GaN∕AlGaN∕GaN high electron mobility transistors
2. N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier
3. Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
4. Molecular beam epitaxy growth of GaN on C-terminated 6H–SiC (0001¯) surface
5. Dislocation scattering in a two-dimensional electron gas
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy;Journal of Physics D: Applied Physics;2023-05-19
2. The deformation mechanism of gallium-faces and nitrogen-faces gallium nitride during nanogrinding;International Journal of Mechanical Sciences;2022-01
3. Adsorption of nitrogen at AlN(000-1) surface – Decisive role of structural and electronic factors;Surface Science;2021-11
4. Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures;Applied Physics Letters;2021-03-22
5. N-polar III-nitride transistors;III-Nitride Electronic Devices;2019
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3