Carbon effect on the survival of vacancies in Czochralski silicon during rapid thermal anneal
Author:
Affiliation:
1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
2. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China
Funder
the Science Challenge Project
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4996099
Reference32 articles.
1. Defect engineering of Czochralski single-crystal silicon
2. Impurity engineering of Czochralski silicon
3. The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior
4. The engineering of intrinsic point defects in silicon wafers and crystals
5. On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
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