Controlled Si doping of β-Ga2O3 by molecular beam epitaxy-Reference-Cited by-同舟云学术

Controlled Si doping of β-Ga₂O₃ by molecular beam epitaxy

Published:2022-08-15 Issue:7 Volume:121 Page:072108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

McCandless J. P.¹^ORCID,Protasenko V.¹,Morell B. W.²,Steinbrunner E.³⁴,Neal A. T.⁴^ORCID,Tanen N.²,Cho Y.¹^ORCID,Asel T. J.⁴,Mou S.⁴^ORCID,Vogt P.⁵^ORCID,Xing H. G.¹²⁶^ORCID,Jena D.¹²⁶^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

2. Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA

3. Department of Electrical Engineering, Wright State University, Dayton, Ohio 45435, USA

4. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB, Ohio 45433, USA

5. Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany

6. Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, USA

Abstract

We report controlled silicon doping of Ga2O3 grown in plasma-assisted molecular beam epitaxy. Adding an endplate to the Si effusion cell enables the control of the mobile carrier density, leading to over 5-orders of magnitude change in the electrical resistivity. Room temperature mobilities [Formula: see text] are achieved, with a peak value [Formula: see text] at a doping density of low-[Formula: see text]. Temperature-dependent Hall effect measurements exhibit carrier freeze out for samples doped below the Mott criterion. A mobility of [Formula: see text] is observed at [Formula: see text].

Funder

National Science Foundation

Air Force Office of Scientific Research

Kavli Institute at Cornell, Cornell University

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0101132

Reference29 articles.

1. Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3