Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy-Reference-Cited by-同舟云学术

Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy

Published:2020-04-13 Issue:15 Volume:116 Page:152102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Laleyan David Arto¹^ORCID,Fernández-Delgado Natalia²^ORCID,Reid Eric T.¹,Wang Ping¹^ORCID,Pandey Ayush¹^ORCID,Botton Gianluigi A.³⁴^ORCID,Mi Zetian¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USA

2. Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510 Puerto Real, Cádiz, Spain

3. Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street W, Hamilton, Ontario L8S 4M1, Canada

4. Canadian Light Source, 44 Innovation Boulevard, Saskatoon, Saskatchewan S7N 2V3, Canada

Funder

Natural Sciences and Engineering Research Council of Canada

Army Research Office

Consejería de Economía, Innovación, Ciencia y Empleo, Junta de Andalucía

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5144838

Reference62 articles.