Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102312
Reference6 articles.
1. A Staining Technique for the Study of Two‐Dimensional Dopant Diffusion in Silicon
2. Two-dimensional impurity profiling with emission computed tomography techniques
3. Scanning capacitance microscopy
4. Scanning capacitance microscopy
5. High‐resolution capacitance measurement and potentiometry by force microscopy
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