Origin of 90° domain wall pinning in Pb(Zr0.2Ti0.8)O3heteroepitaxial thin films-Reference-Cited by-同舟云学术

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Origin of 90° domain wall pinning in Pb(Zr0.2Ti0.8)O3heteroepitaxial thin films

Published:2011-09-05 Issue:10 Volume:99 Page:102902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Su Dong,Meng Qingping,Vaz C. A. F.,Han Myung-Geun,Segal Yaron,Walker Fred J.,Sawicki Monica,Broadbridge Christine,Ahn Charles H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3634028

Reference23 articles.

1. Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide

2. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

3. Origin of the Magnetoelectric Coupling Effect inPb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3Multiferroic Heterostructures

4. Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films

5. Domain formation and strain relaxation in epitaxial ferroelectric heterostructures

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