Enhanced ionized impurity scattering in nanowires
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4811534
Reference27 articles.
1. Colloquium: Structural, electronic, and transport properties of silicon nanowires
2. Formation of Dopant-Pair Defects and Doping Efficiency in B- and P-Doped Silicon Nanowires
3. Surface Segregation and Backscattering in Doped Silicon Nanowires
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5. Effects of Quantum Confinement on the Doping Limit of Semiconductor Nanowires
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1. Numerical computation of spin-transfer torques for antiferromagnetic domain walls;Physical Review B;2020-04-22
2. The electronic structures of AlN and InN wurtzite nanowires;Superlattices and Microstructures;2017-07
3. Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches;Journal of Applied Physics;2014-02-07
4. The influence of ionized impurity scattering on the thermopower of Si nanowires;Journal of Physics: Condensed Matter;2013-11-12
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