Effect of space layer doping on photoelectric conversion efficiency of InAs/GaAs quantum dot solar cells
Author:
Affiliation:
1. Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, South Korea
2. Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, South Korea
Funder
Korea Instiute of Energy Technology Evaluation and Planning
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4935940
Reference24 articles.
1. Highly Efficient Multiple Exciton Generation in Colloidal PbSe and PbS Quantum Dots
2. Particle conservation in the hot-carrier solar cell
3. Organic Tandem and Multi-Junction Solar Cells
4. Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells
5. The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept
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2. Defect States in InP/InGaAs/InP Heterostructures by Current–Voltage Characteristics and Deep Level Transient Spectroscopy;Journal of Nanoscience and Nanotechnology;2018-09-01
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