Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate-Reference-Cited by-同舟云学术

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Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Published:2012-10-08 Issue:15 Volume:101 Page:151113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cosendey Gatien,Castiglia Antonino,Rossbach Georg,Carlin Jean-François,Grandjean Nicolas

Funder

Swiss National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4757873

Reference18 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate

4. Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

5. Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature

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1. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition;Journal of Alloys and Compounds;2024-12

2. Over 20% wall plug efficiency of on-wafer GaN-based vertical-cavity surface-emitting laser;Applied Physics Letters;2024-03-25

3. In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements;physica status solidi (b);2024-03-25

4. Nanomaterial integration in micro LED technology: Enhancing efficiency and applications;Next Nanotechnology;2024

5. Impacts of SiO₂-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers;IEEE Transactions on Electron Devices;2023-11

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