Technique for determining concentration profiles of boron impurities in substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661816
Reference13 articles.
1. Discovery of anomalous base regions in transistors
2. Boron atom distributions in ion‐implanted silicon by the (n,4He) nuclear reaction
3. Stopping Cross Sections for 0.3‐ to 1.7‐MeV Helium Ions in Silicon and Silicon Dioxide
4. Range and stopping-power tables for heavy ions
Cited by 133 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Post Deposition Interfacial Néel Temperature Tuning in Magnetoelectric B:Cr2O3;Advanced Physics Research;2023-10-13
2. A demonstration study of lithium-ion battery by neutron depth profiling with a low flux neutron source;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXV;2023-10-03
3. A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO2 thin films grown by ALD between 100 and 300 °C;Vacuum;2023-10
4. Measurement of Nanoscale Film Thickness Using Neutron Depth Profiling Technique;ACS Applied Materials & Interfaces;2023-07-11
5. Water-rich conditions during titania atomic layer deposition in the 100 °C-300 °C temperature window produce films with TiIV oxidation state but large H and O content variations;Applied Surface Science;2022-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3