Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions-Reference-Cited by-同舟云学术

Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

Published:2014-11-24 Issue:21 Volume:105 Page:213501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Wei¹²^ORCID,Zhang Qin¹,Bijesh R.³,Kirillov Oleg A.¹,Liang Yiran²,Levin Igor¹,Peng Lian-Mao²,Richter Curt A.¹,Liang Xuelei²,Datta S.³,Gundlach David J.¹,Nguyen N. V.¹

Affiliation:

1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA

2. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China

3. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

Funder

Ministry of Education of the People's Republic of China (MOE)

Ministry of Science and Technology of the People's Republic of China (Chinese Ministry of Science and Technology)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902418

Reference34 articles.

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5. A. Bowonder , P. Patel , K. Jeon , J. Oh , P. Majhi , H.H. Tseng , and C. Hu , in8th International Workshop on Junction Technology( IEEE, 2009), p. 93.

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