Microcrystalline to amorphous transition in silicon from microwave plasmas
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96931
Reference11 articles.
1. The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport
2. Characterization of plasma-deposited microcrystalline silicon
3. Low‐temperature crystallization of dopeda‐Si:H alloys
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Use of A GAS Jet Technique to Prepare Microcrystalline Silicon Based Solar Cells at High I-Layer Deposition Rates;MRS Proceedings;1999
2. Microcrystallinity of Undoped Amorphous Silicon Films and Its Effects on the Transfer Characteristics of Thin-Film Transistors;Japanese Journal of Applied Physics;1995-11-15
3. Effects of pressure on the formation of phosphorus‐doped microcrystalline silicon films deposited by radio‐frequency glow discharge;Journal of Applied Physics;1995-05
4. Properties of polysilicon films deposited on amorphous substrates using reactive plasma beam deposition technique;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-01
5. Deposition temperature dependence of the deep defect density for a‐Si:H films grown by electron cyclotron resonance microwave plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-05
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