Correlation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi1.5Sb0.5Te1.3Se1.7

Author:

Singh Mahima1ORCID,Ghosh Labanya1,Gangwar Vinod K.1,Kumar Yogendra23,Pal Debarati1,Shahi P.4ORCID,Kumar Shiv5ORCID,Mukherjee Sudip6,Shimada K.5ORCID,Chatterjee Sandip1ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221-005, India

2. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

4. Department of Physics, D.D.U. Gorakhpur University, Gorakhpur 27300, India

5. Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan

6. UGC-DAE Consortium for Scientific Research, Mumbai Center, Trombay, Mumbai 400085, India

Abstract

The magneto-transport and angle-resolved photoelectron spectroscopy (ARPES) of the S-doped Bi1.5Sb0.5Te1.3Se1.7 system have been investigated. Both the positive magnetoresistance (pMR) and negative magnetoresistance (nMR) under a perpendicular magnetic field as well as a changeover from weak antilocalization (WAL) to weak localization (WL) are observed. The interplay between pMR and nMR is elucidated in terms of the dephasing and spin–orbit scattering time scales. The topological surface state bands have been explored using ARPES.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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