Stress cancellation in silicon oxynitride/InP structures obtained by rapid thermal chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351531
Reference16 articles.
1. Deposition of Silicon Dioxide Layers on Inp by Flash C.V.D for Misfet Applications
2. Photo-assisted deposition of thin films on III–V semiconductors with UV and IR lamps
3. Elastic calculation of the thermal strains and stresses of the multilayered plate
4. Stress in silicon dioxide films deposited using chemical vapor deposition techniques and the effect of annealing on these stresses
5. Mechanical Stress and Electrical Properties of MNOS Devices as a Function of the Nitride Deposition Temperature
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of SiON/InP MOS structure with sulfidation, fluorination, and hydrogenation;Applied Physics A;2012-12-14
2. Deposition of silicon oxynitride films by ion beam sputtering at room temperature;Optical Review;2009-03
3. Selective-area epitaxial growth of GaAs in deep dielectric windows using molecular beam epitaxy;Journal of Crystal Growth;2001-01
4. Temperature dependence of the biaxial modulus, intrinsic stress and composition of plasma deposited silicon oxynitride films;Journal of Applied Physics;1995-08
5. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995
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