Growth and characterization of Y2O3:Eu on Si and yttria-stabilized zirconia
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1415069
Reference25 articles.
1. Structure and composition of interfacial silicon oxide layer in chemical vapor deposited Y2O3‐SiO2bilayer dielectrics for metal‐insulator‐semiconductor devices
2. Yttrium oxide based metal-insulator-semiconductor structures on silicon
3. Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuits
4. Choice of dielectrics for TFEL displays
5. YBa2Cu3O7−δfilms on Si with Y‐stabilized ZrO2and Y2O3buffer layers: High‐resolution electron microscopy of the interfaces
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