Perspective: Entropy-stabilized oxide memristors

Author:

Chae Sieun1ORCID,Yoo Sangmin2ORCID,Kioupakis Emmanouil3ORCID,Lu Wei D.2ORCID,Heron John T.3ORCID

Affiliation:

1. School of Electrical Engineering and Computer Science, Oregon State University 1 , Corvallis, Oregon 97331, USA

2. Department of Electrical Engineering and Computer Science, University of Michigan 2 , Ann Arbor, Michigan 48109, USA

3. Department of Materials Science and Engineering, University of Michigan 3 , Ann Arbor, Michigan 48109, USA

Abstract

A memristor array has emerged as a potential computing hardware for artificial intelligence (AI). It has an inherent memory effect that allows information storage in the form of easily programmable electrical conductance, making it suitable for efficient data processing without shuttling of data between the processor and memory. To realize its full potential for AI applications, fine-tuning of internal device dynamics is required to implement a network system that employs dynamic functions. Here, we provide a perspective on multicationic entropy-stabilized oxides as a widely tunable materials system for memristor applications. We highlight the potential for efficient data processing in machine learning tasks enabled by the implementation of “task specific” neural networks that derive from this material tunability.

Funder

National Science Foundation

Publisher

AIP Publishing

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