Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors-Reference-Cited by-同舟云学术

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

Published:2002-03-04 Issue:9 Volume:80 Page:1661-1663
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Luo B.¹,Johnson J. W.¹,Kim J.¹,Mehandru R. M.¹,Ren F.¹,Gila B. P.²,Onstine A. H.²,Abernathy C. R.²,Pearton S. J.²,Baca A. G.³,Briggs R. D.³,Shul R. J.³,Monier C.³,Han J.⁴

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611

2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

3. Sandia National Laboratories, Albuquerque, New Mexico 87185

4. Yale University, New Haven, Connecticut 06520

Abstract

Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100 °C) layers of MgO or Sc2O3 deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiNX passivation in terms of long-term device stability.

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/80/9/1661/18564526/1661_1_online.pdf

Reference30 articles.

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3. Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz

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