Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1425451
Reference12 articles.
1. Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems
2. Suppression of threading dislocation generation in GaAs-on-Si with strained short-period superlattices
3. High-Quality GaAsxP1-x/In0.13Ga0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations
4. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
5. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
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