Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1425459
Reference10 articles.
1. Gap at the Fermi level in the intermetallic vacancy system RBiSn(R=Ti,Zr,Hf)
2. Transport properties of pure and dopedMNiSn (M=Zr, Hf)
3. Efficient dopants for ZrNiSn-based thermoelectric materials
4. Synthesis of filled skutterudite compounds: BayFexCo4−xSb12
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