Doping level of Mn in high temperature grown Zn1−x MnxO studied through electronic charge distribution, magnetization, and local structure

Abstract

AbstractMn inclusion in the oxide based diluted magnetic semiconductor Zn1−x MnxO (x = 0.04, 0.06, 0.08, and 0.10) grown by standard high temperature solid state reaction technique has been studied. The local and average structure of Zn1−x MnxO was characterized by the super resolution technique maximum entropy method and pair distribution function analysis using the X-ray powder data. Magnetic studies on this material using a Vibrating Sample Magnetometer were also carried out to ascertain the doping level in Zn1−x MnxO.