Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2

Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2–300 K

Published:2011-09 Issue:9 Volume:45 Page:1117-1123
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Shaldin Yu. V.,Matyjasik S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261109017X.pdf

Reference17 articles.

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3. A. V. Dobrynin, N. P. Kazakov, and G. A. Gaida, Zarubezh. Elektron. Tekhn. 3 (1989).

4. N. Gavrilova, E. Maksimov, V. Novik, and S. Drozhdin, Sov. Phys. Solid State 27, 1559 (1985).

5. O. V. Avdeev, I. S. Barash, Yu. A. Vodakov, E. N. Mo- khov, S. S. Nagalyuk, A. D. Roenkov, A. S. Segal’, T. Yu. Chemekova, and Yu. N. Makarov, in Proceedings of the 13th NKRK Conference (IKRAN, Moscow, 2008), p. 7.

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