Domain formation during syntaxy of polytypes of silicon carbide-Reference-Cited by-同舟云学术

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Domain formation during syntaxy of polytypes of silicon carbide

Published:2007-12 Issue:12 Volume:41 Page:1389-1393
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Avrov D. D.,Dorozhkin S. I.,Lebedev A. O.,Tairov Yu. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607120019.pdf

Reference16 articles.

1. V. V. Luchinin and Yu. M. Tairov, Peterb. Zh. Élektron., No. 3, 53 (1996).

2. A. R. Verma and P. Krishna, Polymorphism and Polytypism in Crystals (Wiley, New York, 1966; Mir, Moscow, 1969).

3. J. A. Lely, Ber. Dtsch. Keram. Ges. 32, 229 (1955).

4. D. Siche, H.-J. Rost, J. Doerschel, et al., J. Cryst. Growth 237–239, 1187 (2002).

5. J. F. Kelly, G. R. Fisher, and P. Barnes, Mater. Res. Bull. 40, 249 (2005).

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1. On the Structural Perfection of Large-Diameter Silicon Carbide Ingots;Inorganic Materials;2020-09

2. Effect of SiC substrate properties on structural perfection and electrical parameters of AlGaN/GaN layers;Modern Electronic Materials;2017-03

3. Polytype inclusions and polytype stability in silicon-carbide crystals;Semiconductors;2016-04

4. Polytypism in SiC: Theory and experiment;Journal of Crystal Growth;2014-09

5. Defect structure of 4H silicon carbide ingots;Journal of Crystal Growth;2011-03

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