1. Akchurin, R.Kh. and Marmalyuk, A.A., MOS-gidridnaya epitaksiya v tekhnologii materialov fotoniki i elektroniki (Metalorganic Vapor Phase Epitaxy in Photonic and Electronic Materials Technology), Moscow: Tekhnosfera, 2018.
2. Vasil’ev, M.G., Novikova, E.M., Ershova, S.A., Krapukhin, V.V., and Sokolovskii, K.A., Liquid phase epitaxy of ZnSe/GaAs heterojunctions, Elektron. Tekh.: Ser. Mater., 1976, no. 6, pp. 47–51.
3. Norman, A.G., Seong, T.Y., Ferguson, I.T., Booker, G.R., and Joyce, B.A., Structural studies of natural superlattices in group III–V alloy epitaxial layers, Semicond. Sci. Technol., 1993, vol. 8, no. 1S, pp. S9–S15.
https://doi.org/10.1088/0268-1242/8/1S/003
4. Baranov, A.V. and Voronin, Yu.M., Fizika i tekhnologiya geterostruktur, optika kvantovykh nanostruktur (Physics and Technology of Heterostructures and Optics of Quantum Nanostructures), St. Petersburg: SPbGU ITMO, 2009.
5. Maksimov, A.D., Eistrikh-Geller, V.Yu., Marmalyuk, A.A., Ladugin, M.A., Bagaev, T.A., Gorlachuk, P.V., and Yarotskaya, I.V., A model for calculating the composition of GaAsxP1 –
x solid solutions under metalorganic vapor phase epitaxy conditions, Inorg. Mater., 2017, vol. 53, no. 4, pp. 369–375.
https://doi.org/10.1134/S0020168517040124