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Defect-formation processes in silicon doped with manganese and germanium

  • Published:1998-06 Issue:6 Volume:32 Page:606-607
  • ISSN:1063-7826
  • Container-title:Semiconductors
  • language:en
  • Short-container-title:Semiconductors

Author:

Abdurakhmanov K. P.,Utamuradova Sh. B.,Daliev Kh. S.,Tadjy-Aglaeva S. G.,Érgashev R. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. É. M. Omel’yanovskii and V. I. Fistul’, Impurities of Transition Metals in Semiconductors (Metallurgiya, Moscow, 1983).

2. Yu. M. Babitskii et al., Fiz. Tekh. Poluprovodn. 18, 1242 (1984) [Sov. Phys. Semicond. 18, 775 (1984)].

3. M. Ya. Dashevskii et al., Neorg. Mater. 24, No. 9 (1988).

4. K. P. Abdurakhmanov, Sh. B. Utamuradova et al., Fiz. Tekh. Poluprovodn. 19, 213 (1985) [Sov. Phys. Semicond. 19, 133 (1985)].

5. K. P. Abdurakhmanov, R. F. Vitman, Sh. B. Utamuradova et al., Fiz. Tekh. Poluprovodn. 23, 2227 (1989) [Sov. Phys. Semicond. 23, 1379 (1989)].

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